CNY66B Electronic IC Chips Optocoupler with Phototransistor Output
electronic integrated circuit
,linear integrated circuits
CNY64/ CNY65/ CNY66
Optocoupler, Phototransistor Output, Very High Isolation Voltage
Features
• Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak)
• Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 200
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code H,J &K, Double Protection
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending
• VDE related features:
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I - IV at mains voltage ≤ 300 V
For appl. class I - IV at mains voltage ≤ 600 V
For appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747- 5-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Description
The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin plastic package.
The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
| Parameter | Test condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Input | ||||
| Reverse voltage | VR | 5 | V | |
| Forward current | IF | 75 | mA | |
| Forward surge current | tp ≤ 10 µs | IFSM | 1.5 | A |
| Power dissipation | Pdiss | 120 | mW | |
| Junction temperature | Tj | 100 | °C | |
| Output | ||||
| Collector emitter voltage | VCEO | 32 | V | |
| Emitter collector voltage | VECO | 7 | V | |
| Collector current | IC | 50 | mA | |
| Collector peak current | tp/T = 0.5, tp ≤ 10 ms | ICM | 100 | mA |
| Power dissipation | Pdiss | 130 | mW | |
| Junction temperature | Tj | 100 | °C | |
| Coupler | ||||
| AC isolation test voltage (RMS) | t = 1 min | VISO | 8.2 | kV |
| Total power dissipation | Ptot | 250 | mW | |
| Ambient temperature range | Tamb | - 55 to + 85 | °C | |
| Storage temperature range | Tstg | - 55 to + 100 | °C | |
| Soldering temperature | 2 mm from case, t ≤ 10 s | Tsld | 260 | °C |
Stock Offer (Hot Sell)
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