2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union ， ESCROW
Specifications
Collector-Base Voltage:
-60V
Collector-Emitter Voltage:
-60V
Emitter-Base Voltage:
-7V
Collector Current-Continuous:
-3A
Collector Power Dissipation @TC=25℃:
10W
Junction Temperature:
150℃
Storage Temperature:
-55~150℃
PACKAGE:
TO126
Highlight:
resistor equipped transistor
,epitaxial planar pnp transistor
Introduction
2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation- : PC= 10W(Max)@TC=25℃
·Complement to Type 2SD1899-K
APPLICATIONS
APPLICATIONS
·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
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