2SB1261 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-252VAR high power mosfet transistors
electronic integrated circuit
,linear integrated circuits
2SB1261 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-252VAR high power mosfet transistors
Features:
• Low-power CMOS technology:
- Maximum write current 3 mA at 5.5V
- Maximum read current 400 μA at 5.5V
- Standby current 100 nA, typical at 5.5V
• 2-wire serial interface bus, I2C™ compatible
• Cascadable for up to eight devices
• Self-timed erase/write cycle
• 64-byte Page Write mode available
• 5 ms max. write cycle time
• Hardware write-protect for entire array
• Output slope control to eliminate ground bounce
• Schmitt Trigger inputs for noise suppression
• 1,000,000 erase/write cycles
• Electrostatic discharge protection > 4000V
Description:
The Microchip Technology Inc. 24AA256/24LC256/ 24FC256 (24XX256*) is a 32K x 8 (256 Kbit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.8V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC, TSSOP, MSOP and DFN packages.
STOCK LIST
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