FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip
manufacturer:
Manufacturer
Description:
Mosfet Array 30V 8.6A, 7.3A 900mW Surface Mount 8-SOIC
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Temperature Range:
–55°C To +150 °C
Typical Thermal Resistance:
-7.3A
Voltage:
-30V
Forward Surge Current:
40-78 °C/w
Package:
SOP-8
Factory Package:
REEL
Highlight:
electronic integrated circuit
,digital integrated circuits
Introduction
FDS8858CZ
Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ
P-Channel: -30V, -7.3A, 20.5mΩ
Features
Q1: N-Channel Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
High power and handing capability in a widely used surface mount package
Fast switching speedt
General Description
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Application
Inverter Synchronous Buck
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted
| Symbol | Parameter | Q1 | Q2 | Unit |
| VDS | Drain to Source Voltage | 30 | -30 | V |
| VGS | Gate to Source Voltage | ±20 | ±25 | V |
| Id | Drain Current - Continuous TA = 25°C | 8.6 | -7.3 | A |
| -Pulsed | 20 | -20 | ||
| Pd | Power Dissipation for Dual Operation | 2.0 | w | |
| Power Dissipation for Single Operation TA = 25°C | 1.6 | |||
| TA = 25°C | 0.9 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C | |
A part of stock list
| MAX232EIDR | TI | 62AY3FM/1608 | SOP-16 |
| BCV29 E6327 | 1237/EF | SOT-89 | |
| REDE 330R RP164PJ331CS | SAMSUNG | 20160822 | smd0603*4 |
| REDE 1K RP164PJ102CS | SAMSUNG | 20160816 | smd0603*4 |
| RES 1210 4R7 5% RC1210JR-074R7L | YAGEO | 1627 | SMD1210 |
| C.I SN74LS244N | TI | 64ACSOK | DIP-20 |
| C.I P80C31SBPN | 0935+ | DIP-40 | |
| C.I AT89C51-24PI | ATMEL | 1602 | DIP-40 |
| C.I LM2575T-5.0/NOPB | TI | 61AY9TOE3 | TO-220 |
| C.I M27C512-10F1 | ST | 9G003 | CDIP-28 |
| C.I 74HC245DB,118 | 1618/1619 | SSOP-20 | |
| MCP130T-315I/TT | MICROCHIP | PLEP | SOT23-3 |
| DIODO TPD4E001DBVR | TI | NFYF | SOT23-6 |
| C.I SN74LS374N | TI | 1523+5/56C0DZK/56C0E3K | DIP-20 |
| C.I MIC2937A-3.3BU | MICREL | 9834 | TO-263 |
| C.I SN74LS138N | TI | 67CGG1K | DIP-16 |
| DIODO DF10 | SEP | 1613 | DIP-4 |
| DIODO SS14-E3/61T | VISHAY | 1520/S4 | SMA |
| RES 33K 1% RC0603FR-0733KL |
YAGEO | 1545 | SMD0603 |
| CAP 10UF 16V X5R 10% GRM21BR61C106KE15L |
MURATA | IA6817YW3 | SMD0805 |
| CAP 0603 100NF 50V X7R 06035C104KAT2A | AVX | 1630 | SMD0603 |
| RES 2512 3R6 5% RC2512JK-073R6L | YAGEO | 1631 | SMD2512 |
| RES 1210 4R7 5% RC1210JR-074R7L | YAGEO | 1627 | SMD1210 |
| RES 1210 3R3 5% RC1210JR-073R3L | YAGEO | 1627 | SMD1210 |
| DIODO BZX84-C5V1 | 1601/Z2W | SOT-23 | |
| DIODO BZX84-C6V2 | 1517/Z4W | SOT-23 | |
| RES 10K 5% RC0805JR-0710KL |
YAGEO | 1632 | SMD0805 |
| SENSOR KTY11-6 Q62705-K246 |
T6/S76 | TO-92 | |
| C.I AD767JN | AD | 0604+ | DIP-24 |
| TRIAC BT151-500R | 603 | TO-220 |
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Stock:
MOQ:
100pcs