Spartan-3 FPGA Family Integrated Circuit Chip Complete Data Sheet XC3S400-4PQG208C
digital integrated circuits
,linear integrated circuits
Spartan™-3 FPGA Family: Complete Data Sheet
Features
• Very low cost, high-performance logic solution for high-volume, consumer-oriented applications
- Densities as high as 74,880 logic cells
- Three power rails: for core (1.2V), I/Os (1.2V to 3.3V), and auxiliary purposes (2.5V)
• SelectIO™ signaling
- Up to 784 I/O pins
- 622 Mb/s data transfer rate per I/O
- 18 single-ended signal standards
- 6 differential I/O standards including LVDS, RSDS
- Termination by Digitally Controlled Impedance
- Signal swing ranging from 1.14V to 3.45V
- Double Data Rate (DDR) support
• Logic resources
- Abundant logic cells with shift register capability
- Wide multiplexers
- Fast look-ahead carry logic
- Dedicated 18 x 18 multipliers
- JTAG logic compatible with IEEE 1149.1/1532
• SelectRAM™ hierarchical memory
- Up to 1,872 Kbits of total block RAM
- Up to 520 Kbits of total distributed RAM
• Digital Clock Manager (up to four DCMs)
- Clock skew elimination
- Frequency synthesis
- High resolution phase shifting
• Eight global clock lines and abundant routing
• Fully supported by Xilinx ISE development system
- Synthesis, mapping, placement and routing
• MicroBlaze™ processor, PCI, and other cores
• Pb-free packaging options
• Low-power Spartan-3L Family and Automotive Spartan-3 XA Family options
DC Electrical Characteristics
In this section, specifications may be designated as Advance, Preliminary, or Production. These terms are defined as follows:
Advance: Initial estimates are based on simulation, early characterization, and/or extrapolation from the characteristics of other families. Values are subject to change. Use as estimates, not for production.
Preliminary: Based on characterization. Further changes are not expected.
Production: These specifications are approved once the silicon has been characterized over numerous production lots. Parameter values are considered stable with no future changes expected.
All parameter limits are representative of worst-case supply voltage and junction temperature conditions. The following applies unless otherwise noted: The parameter values published in this module apply to all Spartan™-3 devices. AC and DC characteristics are specified using the same numbers for both commercial and industrial grades. All parameters representing voltages are measured with respect to GND.
Some specifications list different values for one or more die revisions. All presently available Spartan-3 devices are classified as revision 0. Future updates to this module will introduce further die revisions as needed.
If a particular Spartan-3 FPGA differs in functional behavior or electrical characteristic from this data sheet, those differences are described in a separate errata document. The errata documents for Spartan-3 FPGAs are living documents and are available online.
All specifications in this module also apply to the Spartan-3L family (the low-power version of the Spartan-3 family). Refer to the Spartan-3L datasheet (DS313) for any differences.
Table 1: Absolute Maximum Ratings
Symbol | Description | Conditions | Min | Max | Units | |
VCCINT | Internal supply voltage | –0.5 | 1.32 | V | ||
VCCAUX | Auxiliary supply voltage | –0.5 | 3.00 | V | ||
VCCO | Output driver supply voltage | –0.5 | 3.75 | V | ||
VREF | Input reference voltage | –0.5 | VCCO + 0.5(3) | V | ||
VIN(2) | Voltage applied to all User I/O pins and Dual-Purpose pins | Driver in a high-impedance state | –0.5 | VCCO + 0.5(3) | V | |
Voltage applied to all Dedicated pins | –0.5 | VCCAUX+ 0.5(4) | V | |||
VESD | Electrostatic Discharge Voltage | Human body model | XC3S50 | -1500 | +1500 | V |
Other | -2000 | +2000 | V | |||
Charged device model | -500 | +500 | V | |||
Machine model | XC3S50, XC3S400, XC3S1500 | -200 | +200 | V | ||
TJ | Junction temperature | VCCO < 3.0V | -- | 125 | °C | |
VCCO > 3.0V | -- | 105 | °C | |||
TSTG | Storage temperature | -65 | 150 | °C |
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions beyond those listed under the Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time adversely affects device reliability.
2. As a rule, the VIN limits apply to both the DC and AC components of signals. Simple application solutions are available that show how to handle overshoot/undershoot as well as achieve PCI compliance. Refer to the following application notes: "Virtex-II Pro™ and Spartan-3 3.3V PCI Reference Design" (XAPP653) and "Using 3.3V I/O Guidelines in a Virtex-II Pro Design" (XAPP659).
3. All User I/O and Dual-Purpose pins (DIN/D0, D1–D7, CS_B, RDWR_B, BUSY/DOUT, and INIT_B) draw power from the VCCO power rail of the associated bank. Meeting the VIN max limit ensures that the internal diode junctions that exist between each of these pins and the VCCO rail do not turn on. Table 5 specifies the VCCO range used to determine the max limit. When VCCO is at its maximum recommended operating level (3.45V), VIN max is 3.95V. The maximum voltage that avoids oxide stress is VINX = 4.05V. As long as the VIN max specification is met, oxide stress is not possible.
4. All Dedicated pins (M0–M2, CCLK, PROG_B, DONE, HSWAP_EN, TCK, TDI, TDO, and TMS) draw power from the VCCAUX rail (2.5V). Meeting the VIN max limit ensures that the internal diode junctions that exist between each of these pins and the VCCAUX rail do not turn on. Table 5 specifies the VCCAUX range used to determine the max limit. When VCCAUX is at its maximum recommended operating level (2.625V), VIN max < 3.125V. As long as the VIN max specification is met, oxide stress is not possible. For information concerning the use of 3.3V signals, see the 3.3V-Tolerant Configuration Interface section in Module 2: Functional Description.
5. For soldering guidelines, see "Device Packaging and Thermal Characteristics" at www.xilinx.com/bvdocs/userguides/ug112.pdf.
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
Image | Part # | Description | |
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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