IRF3205 Power MOSFET Transistor general purpose mosfet led diode smd
manufacturer:
Manufacturer
Description:
N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Junction-to-Case –––:
0.75 °C/W
Case-to-Sink, Flat, Greased Surface:
0.50 °C/W
Junction-to-Ambient:
62 °C/W
Drain-to-Source Breakdown Voltage:
55 V
Breakdown Voltage Temp. Coefficient:
0.057 V/°C
Highlight:
led diode za tablice
,led diode strip
Introduction
IRF3205 Power MOSFET Transistor general purpose mosfet
►Advanced Process
►Technology Ultra Low On-Resistance
►Dynamic dv/dt Rating 175°C
►Operating Temperature
►Fast Switching
►Fully Avalanche Rated Desc
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
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Stock:
MOQ:
50pcs