New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 80 V 500 mA 800 mW Through Hole TO-5AA
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union,Paypal
Specifications
Collector Current:
0.5 MA
Collector-Base Voltage:
120
Fast Switching:
30 NS
Meets:
MIL-S-19500/182
Highlight:
electronic pressure sensors
,hall effect sensor ic
Introduction
| RATING | SYMBOL | MAX. | UNIT |
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Emitter Voltage | VCER | 100 | Vdc |
| Collector-Base Voltage | VCBO | 120 | Vdc |
| Emitter-Base Voltage | VEBO | 7.0 | Vdc |
| Collector Current - Continuous | IC | 0.5 | Adc |
| Total Device Dissipation @ T A = 25oC Derate above 25oC | PD | 0.8 | Watt mW/oC |
| Total Device Dissipation @ T C = 25oC Derate above 25oC | PD | 3.0 | Watt mW/oC |
| Operating Temperature Range | TJ | -55 to +200 | oC |
| Storage Temperature Range | TS | -55 to +200 | oC |
| Thermal Resistance, Junction to Ambient | RqJA | 219 | oC/W |
| Thermal Resistance, Junction to Case | RqJA | 58 | oC/W |
Mechanical Outline
| CHARACTERISTICS | SYMBOL | MIN. | TYP. | MAX. | UNIT |
| Off Characteristics | |||||
| Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1) | BVCER | 100 | -- | ||
| Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1) | BVCEO | 80 | -- | ||
| Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0) | BV(BR)CBO | 120 | -- | Vdc | |
| Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0) | BV(BR)CBO | 7.0 | -- | ||
| Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C) | ICBO | -- | 0.01 | mAdc | |
| Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) | IEBO | -- | 0.01 | mAdc | |
| On Characteristics | |||||
| D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (I C = 10mAdc, VCE = 10 Vdc)(1) (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1) (I C = 150mAdc, VCE = 10 Vdc)(1) | hFE | 20 | -- | -- | |
| Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) | VCE(Sat) | -- | 0.5 | Vdc | |
| Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc) | VCE(Sat) | -- | 1.3 | Vdc | |
| Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) | /hfe/ | 3 | 10 | ||
| Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz) | COBO | 5 | 15 | pF | |
| Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz) | hib | 4.0 | 8.0 | Ohms | |
| Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hrb | -- | 1.5 | X 10-4 | |
| Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hfe | 35 | 100 | -- | |
| Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hob | -- | 0.5 | mmho | |
| Pulse response (Vcc = 20Vdc, Ic = 500mAdc) | ton + tof | -- | 30 | ns |
(1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.
Related Products
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
Diode 60 V 1A Surface Mount SOD-123W
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
Diode 40 V 3A Surface Mount DO-214AC, SMA
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
| Image | Part # | Description | |
|---|---|---|---|
|
|
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
|
|
|
|
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
|
|
|
|
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
|
|
|
|
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
|
|
|
|
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
|
|
|
|
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
|
|
|
|
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
|
|
|
|
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
|
|
|
|
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
|
|
|
|
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
|
Send RFQ
Stock:
MOQ:
100pcs