IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET
![IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET](/images/load_icon.gif){kind=icon}
manufacturer:
Manufacturer
Description:
N-Channel 600 V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage (VGS = 0):
600 V
Gate-source Voltage:
± 20 V
Drain Current (pulsed):
14 A
Peak Diode Recovery Voltage Slope:
3 V/ns
Storage Temperature:
-65 To 150 ℃
Max. Operating Junction Temperature:
150 ℃
Highlight:
npn smd transistor
,multi emitter transistor
Introduction
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET
| TYPE | VDSS | RDS(on) | ID |
| IRFBC30 | 600 V | < 2.2 Ω | 3.6 A |
TO-220
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 600 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kΩ) | 600 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 ℃ | 3.6 | A |
| ID | Drain Current (continuous) at Tc = 100 ℃ | 2.3 | A |
| IDM (•) | Drain Current (pulsed) | 14 | A |
| Ptot | Total Dissipation at Tc = 25 ℃ | 75 | W |
| Derating Factor | 0.6 | W/℃ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | ℃ |
| Tj | Max. Operating Junction Temperature | 150 | ℃ |
(•) Pulse width limited by safe operating area
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
TO-220 MECHANICAL DATA
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