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Home > products > Electronic IC Chips > STP20NM60FP npn general purpose transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

STP20NM60FP npn general purpose transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

manufacturer:
Manufacturer
Description:
N-Channel 600 V 20A (Tc) 45W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
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Specifications
Drain-source Voltage (VGS = 0):
600 V
Drain-gate Voltage (RGS = 20 KΩ):
600 V
Gate- Source Voltage:
±30 V
Peak Diode Recovery Voltage Slope:
15 V/ns
Storage Temperature:
-65 To 150 °C
Max. Operating Junction Temperature:
150 °C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 

STP20NM60-STP20NM60FP-STW20NM60

STB20NM60 - STB20NM60-1

 

N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET

 

General Features

TYPE VDSS RDS(on) ID

STP20NM60

STP20NM60FP

STB20NM60

STB20NM60-1

STW20NM60

600 V

600 V

600 V

600 V

600 V

< 0.29 Ω

< 0.29 Ω

< 0.29 Ω

< 0.29 Ω

< 0.29 Ω

20 A

20 A

20 A

20 A

20 A

■ TYPICAL RDS(on) = 0.25 Ω

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

 

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

 

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

 

Absolute Maximum ratings

Symbol Parameter Value Unit
   

TO-220/D²PAK/

I²PAK/TO-247

TO-220FP  
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30  V
ID Drain Current (continuous) at TC = 25°C 20 20 (*) A
ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (*) A
IDM (•) Drain Current (pulsed) 80 80 (*) A
PTOT Total Dissipation at TC = 25°C 192 45 W
  Derating Factor 1.2 0.36 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
VISO Insulation Winthstand Voltage (DC) - 2500 V
Tstg Storage Temperature -65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C

(•) Pulse width limited by safe operating area

(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

 

Package

 

 

Internal Schematic Diagram

 

 

 

Stock Offer (Hot Sell)

Part NO. Q'ty MFG D/C Package
SAP16NY 200 SANKEN 06+ TO-3P
LM393DR2G 25000 ON 15+ SOP-8
LM2931AD2T-5.0R4G 3000 ON 15+ SOT-263
MXL683-AF-R 3680 MAXLINEAR 16+ QFN
MPU-9150 6050 INVENSEN 14+ QFN
PIC16F648A-I/P 5108 MICROCHIP 14+ DIP
LM2936DTX-3.3 3608 NSC 14+ SOT-252
MSP430G2553IPW28R 6862 TI 16+ TSSOP
PIC18F65K90-I/PT 4323 MICROCHIP 14+ TQFP
MCP809T-315I/TT 5656 MICROCHIP 11+ SOT-23
L6385ED013TR 3895 ST 14+ SOP8
LA6358N 3950 SANYO 09+ SOP-8
LM317HVT 500 NSC 14+ TO-220
CY7B933-400JXC 1046 CYPRESS 15+ PLCC
LNBH24PPR 1633 ST 14+ SSOP-36
PCA9538PW 12240 14+ TSSOP
MCP73831T-2DCI/OT 5584 MICROCHIP 16+ SOT23-5
PTH08T230WAD 800 TI 14+ DIP
LMH0344SQ 2972 NSC 13+ WQFN-16
LMH0002SQ 1632 TI 14+ QFN
LM2598SX-ADJ 3000 NSC 15+ TO-263

 

 

 

 

 

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