S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE
npn smd transistor
,multi emitter transistor
SCRs (1 A to 70 A)
General Description
The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are required, see “Sensitive SCRs” section of this catalog.
Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.
The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.
Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.
Features
• RoHS Compliant
• Electrically-isolated package
• High voltage capability — 200 V to 1000 V
• High surge capability — up to 950 A
• Glass-passivated chip
Compak SCR
• Surface mount package — 1 A series
• New small profile three-leaded Compak package
• Packaged in embossed carrier tape with 2,500 devices per reel
• Can replace SOT-223
Specific Test Conditions
di/dt — Maximum rate-of-rise of on-state current; IGT = 150 mA with ≤ 0.1 µs rise time
dv/dt — Critical rate of applied forward voltage
I 2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing
IDRM and IRRM — Peak off-state forward and reverse current at VDRM and VRRM
Igt — dc gate trigger current; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices
IGM — Peak gate current
IH — dc holding current; gate open
IT — Maximum on-state current
ITSM — Peak one-cycle forward surge current
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation
tgt — Gate controlled turn-on time; gate pulse = 100 mA; minimum width = 15 µs with rise time ≤ 0.1 µs
tq — Circuit commutated turn-off time
VDRM and VRRM — Repetitive peak off-state forward and reverse voltage
Vgt — DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices
VTM — Peak on-state voltage at maximum rated RMS current
General Notes
• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.
• Operating temperature range (TJ) is -65 °C to +125 °C for TO-92 devices and -40 °C to +125 °C for all other packages.
• Storage temperature range (TS) is -65 °C to +150 °C for TO-92 devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and -40 °C to +125 °C for all others.
• Lead solder temperature is a maximum of 230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.
• The case temperature (TC) is measured as shown on dimensional outline drawings in the “Package Dimensions” sectionof this catalog.
Stock Offer (Hot Sell)
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
| Image | Part # | Description | |
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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