RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)
manufacturer:
Manufacturer
Description:
N-Channel 200 V 10A (Ta) 35W (Tc) Through Hole TO-220FN
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-Source Voltage:
200 V
Gate-Source Voltage:
±30 V
Drain Current (Continuous):
10 A
Avalanche Current:
10 A
Avalanche Energy:
120 MJ
Storage Temperature:
−55 To +150 °C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
Switching (200V, 10A)
RDN100N20
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings (Ta=25°C)
| Parameter | Symbol | Limits | Unit | |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Drain Current | Continuous | ID | 10 | A |
| Pulsed | IDP *1 | 40 | A | |
| Reverse Drain Current | Continuous | IDR | 10 | A |
| Pulsed | IDRP *1 | 40 | A | |
| Avalanche Current | IAS *2 | 10 | A | |
| Avalanche Energy | EAS *2 | 120 | mJ | |
| Total Power Dissipation (TC=25°C) | PD | 35 | W | |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | −55 to +150 | °C | |
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
External dimensions (Unit : mm)
Equivalent circuit
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Stock Offer (Hot Sell)
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