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Home > products > Electronic IC Chips > MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

manufacturer:
Manufacturer
Description:
IGBT
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
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Specifications
Collector–Emitter Voltage:
1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ):
1200 Vdc
Gate–Emitter Voltage — Continuous:
± 20 Vdc
Total Power Dissipation @ TC = 25°C:
125 Watts
Operating And Storage Junction Temperature Range:
–55 To 150 °C
Short Circuit Withstand Time:
10 μs
Highlight:

npn smd transistor

,

silicon power transistors

Introduction

 
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
 
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
 
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
 
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
 
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Collector–Emitter Voltage VCES 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc
Gate–Emitter Voltage — Continuous VGE ± 20 Vdc

Collector Current — Continuous @ TC = 25°C

                            — Continuous @ TC = 90°C

                                — Repetitive Pulsed Current (1)

IC25

IC90

ICM

20

12

40

Vdc

 

Apk

Total Power Dissipation @ TC = 25°C

                 Derate above 25°C

PD

125

0.98

Watts

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C

Short Circuit Withstand Time

(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

tsc 10 μs

Thermal Resistance — Junction to Case – IGBT

                                 — Junction to Case – Diode

                        — Junction to Ambient

RθJC

RθJC

RθJA

1.0

1.4

45

°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C
Mounting Torque, 6–32 or M3 screw 10 lbf*in (1.13 N*m)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
 
PACKAGE DIMENSIONS

 
 
Stock Offer (Hot Sell)

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NCT3941S-A 14560 NUVOTON 11+ SOP-8
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PIC16F76T-I/SO 4988 MICROCHIP 14+ SOP

 
 
 
 

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