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Home > products > Electronic IC Chips > IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

manufacturer:
Manufacturer
Description:
N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
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Payment Method:
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Specifications
Continuous Drain Current, VGS @ 10V:
21 A
Pulsed Drain Current:
124 A
Linear Derating Factor:
1.3 W/°C
Gate-to-Source Voltage:
± 30 V
Peak Diode Recovery Dv/dt:
2.1 V/ns
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

HEXFET Power MOSFET

 

VDSS RDS(on) max ID
200V 0.082Ω 31A

 

Applications

  • High Frequency DC-DC converters 
  • Lead-Free

Benefits

  • Low Gate to Drain to Reduce Switching Losses 
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) 
  • Fully Characterized Avalanche Voltage and Current

 

 

Absolute Maximum Ratings

  Parameter Max. Unit
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31‡ A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current  124 A
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 2.1 V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

 

 

Stock Offer (Hot Sell)

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