SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor
manufacturer:
Manufacturer
Description:
N-Channel 600 V 34.1A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Pulsed Drain Current:
85 A
Avalanche Current, Repetitive T AR:
20 A
Drain Source Voltage Slope:
80 V/ns
Reverse Diode Dv /dt:
40 V/ns
Power Dissipation:
313 W
Operating And Storage Temperature:
-55 To 150 °C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
CoolMOSTM Power Transistor
Features PG-TO247
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
| VDS | 600 | V |
| RDS(on),max | 0.118 | Ω |
| ID | 34 | A |
Maximum ratings, at T j =25 °C, unless otherwise specified
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 °C | 34.1 | A |
| T C=100 °C | 21.6 | A | ||
| Pulsed drain current2) | I D,pulse | T C=25 °C | 85 | A |
| Avalanche energy, single pulse | E AS | I D=10 A, V DD=50 V | 1300 | mJ |
| Avalanche energy, repetitive t AR 2),3) | E AR | I D=20 A, V DD=50 V | 1 | mJ |
| Avalanche current, repetitive t AR 2),3) | I AR | 20 | A | |
| Drain source voltage slope | dv /dt |
I D=34.1 A, V DS=480 V, T j =125 °C |
80 | V/ns |
| Reverse diode dv /dt | dv /dt |
I S=34.1 A, V DS=480 V, T j =125 °C
|
40 | V/ns |
| Maximum diode commutation speed | di /dt | 600 | A/µs | |
| Gate source voltage | V GS | static | ±20 | V |
| AC (f >1 Hz) | ±30 | V | ||
| Power dissipation | P tot | T C=25 °C | 313 | W |
| Operating and storage temperature | T j , T stg | -55 ... 150 | °C |
PG-TO247-3-21-41
Stock Offer (Hot Sell)
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