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Home > products > Electronic IC Chips > IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

manufacturer:
Manufacturer
Description:
Mosfet Array 200V 9.1A 21W Through Hole TO-220-5 Full-Pak
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VDS:
200 V
RDS(ON) Typ. @ 10V:
80 M
Qg Typ.:
19 NC
Qsw Typ:
6.8 NC
RG(int) Typ.:
3.0 Ω
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

Features

► Integrated half-bridge package 

► Reduces the part count by half 

► Facilitates better PCB layout 

► Key parameters optimized for Class-D audio amplifier applications 

► Low RDS(ON) for improved efficiency 

► Low Qg and Qsw for better THD and improved efficiency  Low Qrr for better THD and lower EMI 

► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier 

► Lead-free package

 

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

 

  Parameter   Max Units
VDS  Drain-to-Source Voltage 200  V
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.1

A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A

 

 

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MOQ:
20pcs