FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
manufacturer:
Manufacturer
Description:
IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Emitter Voltage:
1200 V
Gate-Emitter Voltage:
± 20 V
Pulsed Collector Current:
90 A
Diode Maximum Forward Current:
150 A
Operating Junction Temperature:
-55 To +150 °C
Storage Temperature Range:
-55 To +150 °C
Highlight:
npn smd transistor
,multi emitter transistor
Introduction
FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C
• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Absolute Maximum Ratings
| Symbol | Description | FGA25N120ANTD | Units |
| VCES | Collector-Emitter Voltage | 1200 | V |
| VGES | Gate-Emitter Voltage | ± 20 | V |
| IC | Collector Current @ TC = 25°C | 50 | A |
| Collector Current @ TC = 100°C | 25 | A | |
| ICM | Pulsed Collector Current (Note 1) | 90 | A |
| IF | Diode Continuous Forward Current @ TC = 100°C | 25 | A |
| IFM | Diode Maximum Forward Current | 150 | A |
| PD | Maximum Power Dissipation @ TC = 25°C | 312 | W |
| Maximum Power Dissipation @ TC = 100°C | 125 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| Tstg | Storage Temperature Range | -55 to +150 | °C |
| TL |
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds |
300 | °C |
Mechanical Dimensions
TO-3PN
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MOQ:
10 pcs