Power MOSFET IRF740PBF Silicon Power Transistors Single Configuration
manufacturer:
Manufacturer
Description:
N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
negotiation
Payment Method:
T/T, Western Union, PayPal
Specifications
VDS (V):
400
RDS(on) (Ω):
VGS = 10 V ; 0.55
Qg (Max.) (nC):
9.0
Qgd (nC):
32
Configuration:
Single
Package:
TO-220
Highlight:
npn smd transistor
,silicon power transistors
Introduction
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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