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Home > products > Electronic IC Chips > Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

manufacturer:
Manufacturer
Description:
N-Channel 500 V 60A (Tc) 1040W (Tc) Through Hole TO-247AD (IXFH)
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union,Paypal
Specifications
Features:
Fast Intrinsic Rectifier ,Avalanche Rated ,Low RDS(ON) And QG
IXFQ:
TO-3P
IXFH:
TO-247
Advantages:
Z High Power Density Z Easy To Mount Z Space Savings
Applications:
Switch-Mode And Resonant-Mode Power Supplies Z DC-DC Converters Z Laser Drivers Z AC And DC Motor Drives
Weight:
TO-268 4.0 G TO-3P 5.5 G TO-247 6.0 G
Highlight:

npn smd transistor

,

silicon power transistors

Introduction

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

 

 

Polar3TM HiperFETTM                              IXFT60N50P3  VDSS = 500V

Power MOSFET                                       IXFQ60N50P3   I D25 = 60A

                                                                                                IXFH60N50P3   RDS(on) ≤ 100mΩ

 

 

N-Channel Enhancement Mode 

Avalanche Rated

Fast Intrinsic Rectifier

 

 

 

 

 

 

 

 

Symbol Test Conditions  Maximum Ratings

VDSS 

VDGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

500 V

500 V

VGSS 

VGSM 

Continuous 

Transient 

± 30 V

± 40 V

I  D25

I DM
 

TC = 25°C 

TC = 25°C, Pulse Width Limited by TJM

60 A

150 A

I A 

EAS

TC = 25°C  

TC = 25°C

30 A

1 J

dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PD  TC = 25°C  1040 W

TJ

TJM 

Tstg

 

-55 ... +150 °C

150 °C

-55 ... +150 °C

 TL

Tsold 

1.6mm (0.062in.) from Case for 10s 

Plastic Body for 10 seconds

300 °C

260 °C

Md  Mounting Torque (TO-247 & TO-3P)  1.13 / 10 Nm/lb.in.
Weight

TO-268

TO-3P 

TO-247 

4.0 g

5.5 g

6.0 g

 

 

Features                                           

Fast Intrinsic Rectifier

Avalanche Rated

 Low RDS(ON) and QG

 Low Package Inductance

 

Advantages

 High Power Density

 Easy to Mount

 Space Savings

 

Applications

 Switch-Mode and Resonant-Mode Power Supplies

 DC-DC Converters z Laser Drivers

 AC and DC Motor Drives

 Robotics and Servo Controls

 

 

 

Fig. 1. Output Characteristics @ TJ = 25ºC    Fig. 2. Extended Output Characteristics @ TJ = 25ºC

 

 

Fig. 3. Output Characteristics @ TJ = 125ºC        Fig. 4. RDS(on) Normalized to ID = 30A Value vs.                                                                                                                  Junction    Temperature

 

 

Fig. 5. RDS(on) Normalized to ID = 30A Value vs.      6. Maximum Drain Current vs. Case                                   Drain CurrentFig.                                                            Temperature

 

                    

 

          Fig. 7. Input Admittance                                                        Fig. 8. Transconductance

 

 

 

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