SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A
manufacturer:
Manufacturer
Description:
N-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-247-3
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
Western Union, T/T, MoneyGram
Specifications
Vdss:
600V
Electric Current:
17A
Power Max:
140W
PACKING:
TO-247-3
Highlight:
power mosfet ic
,silicon power transistors
Introduction
STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET
General Features
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM60N is realized with the second generation. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
APPLICATIONS
It's very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
| SALES TYPE | MARKING | PACKAGE | PACKAGING |
| STB21NM60N | B21NM60N | D2PAK | TAPE & REEL |
| STB21NM60N-1 | B21NM60N | I 2PAK | TUBE |
| STF21NM60N | F21NM60N | TO-220FP | TUBE |
| STP21NM60N | P21NM60N | TO-220 | TUBE |
| STW21NM60N | W21NM60N | TO-247 | TUBE |
Table 3: Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
| TO-220 / D2PAK / I 2PAK / TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 17 | 17 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 10 | 10 (*) | A |
| IDM () | Drain Current (pulsed) | 64 | 64 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 140 | 30 | W |
| Derating Factor | 1.12 | 0.23 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| Viso | Insulation Winthstand Voltage (DC) | ----- | 2500 | V |
| Tstg | Storage Temperature | –55 to 150 150 | °C | |
| Tj | Max. Operating Junction Temperature | |||
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS
Table 4: Thermal Data
| TO-220 / D²PAK / I²PAK / TO-247 | TO-220FP | |||
| Rthj-case | Thermal Resistance Junction-case Max | 0.89 | 4.21 | °C/W |
| Rthj-amb | Thermal Resistance Junction-ambient Max | 62.5 | °C/W | |
| Tl | Maximum Lead Temperature For Soldering Purpose | 300 | °C | |
Table 5: Avalanche Characteristics
| Symbol | Parameter | Max Value | Unit |
| IAS | Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) | 8.5 | A |
| EAS | Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) | 610 | mJ |
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