BF422 Npn Silicon Planar Epitaxial Transistor Low Power Mosfet Transistor N Channel Mos Fet
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 250 V 50 mA 60MHz 830 mW Through Hole TO-92 (TO-226)
Category:
Electronic IC Chips
Price:
negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VCBO:
250 V
VCEO:
250 V
VEBO:
5.0 V
IC:
500 Ma
PD:
900mW
Highlight:
power mosfet ic
,silicon power transistors
Introduction
BF422 NPN SILICON PLANAR EPITAXIAL TRANSISTOR low power mosfet N Channel MOS FET
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
| DESCRIPTION | SYMBOL | VALUE | UNITS |
| Collector -Base Voltage | VCBO | 250 | V |
| Collector -Emitter Voltage | VCEO | 250 | V |
| Emitter -Base Voltage V | EBO | 5.0 | V |
| Collector Current Continuous | IC | 500 | mA |
| Power Dissipation@ Ta=25 deg CDerate Above 25 deg C | PD | 900 | mW |
| Operating & Storage Junction Temperature Range | Tj, Tstg | -55 to +150 | deg C |
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Stock:
MOQ:
50pcs