IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor
manufacturer:
Manufacturer
Description:
N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Gate-to-Source Voltage:
±30 V
Pulsed Drain Current:
180 A
Repetitive Peak Current:
91 A
Linear Derating Factor:
2.2 W/°C
Operating Junction And Storage Temperature:
-40 To + 175°C
Soldering Temperature For 10 Seconds:
300°C
Highlight:
power mosfet ic
,silicon power transistors
Introduction
PDP SWITCH IRFB4229PbF
Features
• Advanced Process Technology
• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch Applications
• Low QG for Fast Response
• High Repetitive Peak Current Capability for Reliable Operation
• Short Fall & Rise Times for Fast Switching
• 175°C Operating Junction Temperature for Improved Ruggedness
• Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters
| VDS min | 250 | V |
| VDS (Avalanche) typ. | 300 | V |
| RDS(ON) typ. @ 10V | 38 | mΩ |
| IRP max @ TC= 100°C | 91 | A |
| TJ max | 175 | °C |
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| VGS | Gate-to-Source Voltage | ±30 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 33 | A |
| IDM | Pulsed Drain Current | 180 | A |
| IRP @ TC = 100°C | Repetitive Peak Current | 91 | A |
| PD @TC = 25°C | Power Dissipation | 330 | W |
| PD @TC = 100°C | Power Dissipation | 190 | W |
| Linear Derating Factor | 2.2 | W/°C | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -40 to + 175 | °C |
| Soldering Temperature for 10 seconds | 300 | °C | |
| Mounting Torque, 6-32 or M3 Screw | 10lbin (1.1Nm) | N |
Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| HIP4080AIBZT | 3925 | INTERSIL | 15+ | SOP |
| TNY266PN | 3970 | POWER | 16+ | DIP7 |
| LM7912CT | 3990 | NS | 16+ | TO-220 |
| HCNW4503 | 3991 | AVAGO | 14+ | SOP8DIP8 |
| ICL7650SCBA | 3996 | INTERSIL | 14+ | SOP-8 |
| LM2575HVT-ADJ | 3997 | NS | 14+ | TO-220 |
| MUR3020PT | 3997 | ON | 16+ | TO-3P |
| IRFR5305 | 3998 | IR | 16+ | TO-252 |
| MJ802 | 3998 | ON | 13+ | TO-3 |
| LBAT54XV2T1G | 3999 | ON | 15+ | SOD-523 |
| VN10LFTA | 3999 | ZETEX | 16+ | SOT23 |
| 1N5341B | 4000 | ON | 16+ | CASE17 |
| 1N5343B | 4000 | ON | 14+ | DO-02 |
| 2SC2383 | 4000 | TOSHIBA | 14+ | TO-92 |
| 2SC3807 | 4000 | SANYO | 14+ | TO-126 |
| 2SK170BL | 4000 | TOSHIBA | 16+ | TO-92 |
| 74HC174D | 4000 | 16+ | SOP-16 | |
| 74LVC245AD | 4000 | 13+ | SOP | |
| AD8572ARZ | 4000 | AD | 15+ | SOP8 |
| AT24C512C-SSHD-T | 4000 | ATEML | 16+ | SOP8 |
| BCV48 | 4000 | 16+ | SOT-89 | |
| BD137 | 4000 | ST | 14+ | TO-126 |
| BTS721L1 | 4000 | 14+ | SOP-20 | |
| CD4027BE | 4000 | TI | 14+ | DIP |
| CPC1017N | 4000 | CLARE | 16+ | SOP4 |
| IRF7307 | 4000 | IR | 16+ | SOP8 |
| IRFR210 | 4000 | IR | 13+ | SOT-252 |
| LT1963AEST-3.3 | 4000 | LT | 15+ | SOT-223 |
| MIC4424BN | 4000 | MICREL | 16+ | DIP8 |
| MICROSMD050F-2 | 4000 | TYCO | 16+ | SMD |
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MOQ:
20pcs