AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor
manufacturer:
Manufacturer
Description:
P-Channel 30 V 11A (Ta), 29A (Tc) 3.1W (Ta), 25W (Tc) Surface Mount 8-DFN-EP (3x3)
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-Source Voltage:
-30 V
Gate-Source Voltage:
±25 V
Continuous Drain Current:
-20 A
Pulsed Drain Current:
-80 A
Junction And Storage Temperature:
-55 To 150°C
Package:
8-DFN
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
AON7403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free
Features
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
| Parameter | Symbol | Maximum | Units | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current B,G | TC=25°C | ID | -20 | A |
| TC=100°C | -20 | |||
| Pulsed Drain Current C | IDM | -80 | ||
| Continuous Drain Current | TA=25°C | IDSM | -8 | |
| TA=70°C | -6 | |||
| Power Dissipation B | TC=25°C | PD | 27 | W |
| TC=100°C | 11 | |||
| Power Dissipation A | TA=25°C | PDSM | 1.6 | |
| TA=70°C | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C | |
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
Stock Offer (Hot Sell)
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| STRW6756 | 1800 | SANKEN | 14+ | TO-220 |
| VN0104N3 | 1800 | SUPERTEX | 14+ | TO-92 |
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| AT24C01 DIP | 1822 | ATMEL | 16+ | DIP |
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MOQ:
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