TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)
power mosfet ic
,silicon power transistors
TN12, TS12 and TYNx12 Series
SENSITIVE & STANDARD 12A SCRS
Main Features
Symbol | Value | Unit |
---|---|---|
IT(RMS) | 12 | A |
VDRM/VRRM | 600 to 1000 | V |
IGT | 0.2 to 15 | mA |
DESCRIPTION
Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits...
Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.
Absolute Ratings (limiting values)
Symbol | Parameter | Value | Unit | |||
TN12-G TYN12 |
TN12-B/H TS12-B/H |
|||||
IT(RMS) | RMS on-state current (180° conduction angle) | Tc = 105°C | 12 | A | ||
IT(AV) | Average on-state current (180° conduction angle) | Tc = 105°C | 8 | A | ||
ITSM | Non repetitive surge peak onstate current | tp = 8.3 ms | Tj = 25°C | 145 | 115 | A |
tp = 10 ms | 140 | 110 | ||||
I ² t | I² t Value for fusing | tp = 10 ms | Tj = 25°C | 98 | 60 | A2S |
dI/dt |
Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns |
F = 60 Hz | Tj = 125°C | 50 | A/µs | |
IGM | Peak gate current | tp = 20 µs | Tj = 125°C | 4 | A | |
PG(AV) | Average gate power dissipation | Tj = 125°C | 1 | W | ||
Tstg Tj |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C | |||
VRGM | Maximum peak reverse gate voltage (for TN12 & TYN12 only) | 5 | V |
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