MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor
multi emitter transistor
,silicon power transistors
TMOS E–FET™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
16 AMPERES 250 VOLTS
RDS(on) = 0.25 OHM
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain–Source Voltage | VDSS | 250 | Vdc |
| Drain–Gate Voltage (RGS = 1.0 MΩ) | VDGR | 250 | Vdc |
|
Gate–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
|
Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) |
ID ID IDM |
16 10 56 |
Adc
Apk |
|
Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range | TJ, Tstg | –55 to 150 | °C |
|
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25 Ω) |
EAS | 384 | mJ |
|
Thermal Resistance — Junction to Case — Junction to Ambient |
RθJC RθJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds | TL | 260 | °C |
Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| NE34018-T1-A 64 | 250 | NEC | NEW | SOT-343 |
| REG710NA-2.5/250 | 250 | TI/BB | NEW | SOT23-6 |
| LC78630ED | 248 | SANYO | NEW | QFP |
| MSM8994-1VV | 248 | QUALCOMM | NEW | BGA |
| CS92210-CM | 240 | CIRRUS | NEW | QFP |
| CY7C1347G133AXC | 240 | CYPRESS | NEW | QFP |
| TMS320DA150PGE16AD | 240 | TI | NEW | TQFP |
| MRF9080LR5 | 239 | FREESCALE | NEW | NI-360 |
| LMH6702MAX | 237 | NS | NEW | SOP |
| RT8056GQW | 236 | RICHTEK | NEW | WDFN-10L |
| DG221DY | 235 | VISHAY | NEW | SOP16 |
| GBU6J | 232 | FAIRCHILD | NEW | SIP4 |
| ADM6996FCX-AD-R-1 | 229 | NEW | QFP | |
| MRF9080R3 | 229 | FREESCALE | NEW | NI-360 |
| TDA7263L | 227 | ST | NEW | ZIP-10 |
| FDC37C932QFP | 225 | SMC | NEW | QFP |
| REG104GA-2.7 | 225 | TI/BB | NEW | SOT223 |
| LC4256V75T100-10I | 223 | LATTICE | NEW | QFP |
| BA5801FS | 220 | ROHM | NEW | SOP |
| MT1389EE | 212 | MTK | NEW | QFP |
| THC63LVDM83R | 206 | THINE | NEW | SSOP |
| MT45W4MW16BFB-708WT | 205 | MICRON | NEW | BGA |
| MAX6459UTA+T | 200 | MAXIM | NEW | SOT23-6 |
| S71PL064JAOBAW070 | 200 | SPANSIO | NEW | BGA |
| LSI2128VE | 199 | LATTICE | NEW | QFP |
| NTMS5P02R2 | 197 | 0N | NEW | SOP |
| ES5107AE | 192 | CYRUSTEK | NEW | DIP40 |
| MD2810-D08 | 192 | MD | NEW | SSOP |
| HPCS1335 B0 | 191 | CORTINA | NEW | BGA |
| AN22113A | 190 | PANASONIC | NEW | QFP |
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
| Image | Part # | Description | |
|---|---|---|---|
|
|
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
|
|
|
|
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
|
|
|
|
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
|
|
|
|
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
|
|
|
|
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
|
|
|
|
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
|
|
|
|
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
|
|
|
|
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
|
|
|
|
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
|
|
|
|
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
|