IRLML6401TRPBF Power Mosfet Transistor P-Channel HEXFET Power MOSFET
multi emitter transistor
,silicon power transistors
IRLML6401PBF
HEXFET® Power MOSFET
• Ultra Low On-Resistance
• P-Channel MOSFET
• SOT-23 Footprint
• Low Profile (<1.1mm)
• Available in Tape and Reel
• Fast Switching
• 1.8V Gate Rated
• Lead-Free
• Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| VDS | Drain- Source Voltage | -12 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -4.5V | -4.3 | A |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ -4.5V | -3.4 | A |
| IDM | Pulsed Drain Current 1 | -34 | A |
| PD @TA = 25°C | Power Dissipation | 1.3 | W |
| PD @TA = 70°C | Power Dissipation | 0.8 | W |
| Linear Derating Factor | 0.01 | W/°C | |
| EAS | Single Pulse Avalanche Energy 4 | 33 | mJ |
| VGS | Gate-to-Source Voltage | ± 8.0 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Notes:
1. Repetitive rating; pulse width limited by max. junction temperature.
4. Starting TJ = 25°C, L = 3.5mH RG = 25Ω, IAS = -4.3A.
Stock Offer (Hot Sell)
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