IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet
power mosfet ic
,silicon power transistors
IRLL110, SiHLL110
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 100 | |
| RDS(on) (Ω) | VGS = 5.0 V | 0.54 |
| Qg (Max.) (nC) | 6.1 | |
| Qgs (nC) | 2.6 | |
| Qgd (nC) | 3.3 | |
| Configuration | Single | |
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ± 10 | V | ||
| Continuous Drain Current | VGS at 5.0 V | TC = 25 °C | ID | 1.5 | A |
| TC = 100 °C | 0.93 | ||||
| Pulsed Drain Currenta | IDM | 12 | A | ||
| Linear Derating Factor | 0.025 | W/°C | |||
| Linear Derating Factor (PCB Mount)e | 0.017 | W/°C | |||
| Single Pulse Avalanche Energyb | EAS | 50 | mJ | ||
| Repetitive Avalanche Currenta | IAR | 1.5 | A | ||
| Repetitive Avalanche Energya | EAR | 0.31 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 3.1 | W | |
| Maximum Power Dissipation (PCB Mount)e | TA = 25 °C | 2.0 | |||
| Peak Diode Recovery dV/dtc | dV/dt | 5.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | °C | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300d | °C | ||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Stock Offer (Hot Sell)
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