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Home > products > Electronic IC Chips > BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

manufacturer:
Manufacturer
Description:
TRIAC Alternistor - Snubberless 600 V 25 A Through Hole TO-220
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
I² T Value For Fusing:
340 A² S
Critical Rate Of Rise Of On-state Current:
50 A/µs
Peak Gate Current:
4 A
Average Gate Power Dissipation:
1 W
Storage Junction Temperature:
- 40 To + 150°C
Operating Junction Temperature:
- 40 To + 125°C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

BTA24, BTB24, BTA25

BTA26, BTB26, T25

25 A standard and Snubberless™ triacs

 

Features

■ High current triac

■ Low thermal resistance with clip bonding

■ High commutation (4 quadrant) or very high commutation (3 quadrant) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS (2002/95/EC) compliant

 

Applications

Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.

 

The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 VRMS).

 

Description

Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26, BTB26 and T25 triac series is suitable for general purpose mains power AC switching.

 

 

 

Absolute maximum ratings

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TOP3 Tc = 105°C 25 A
D2PAK / TO-220AB Tc = 100°C
RD91 Ins/ TOP3 Ins. Tc = 100°C
TO-220AB Ins. Tc = 75°C
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) F = 50 Hz t = 20 ms 250 A
F = 60 Hz t = 16.7 ms 260
I ² t I ² t Value for fusing tp = 10 ms 340 A² s
dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz Tj = 125°C 50 A/µs
VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

 

 

 

 

Stock Offer (Hot Sell)

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HD74LS86 771 HITACHI 13+ DIP14
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PIC16F876A-I/SO 771 MICROCHIP 16+ SOP
J0026D01BNL 777 PULSE 16+ RJ45
AF4502C 780 ANACHIP 14+ SOP-8
ACS712ELCTR-20A 782 ALLEGRO 14+ SOP
IRF520 782 IR 14+ TO-220
IRFB4710 782 IR 16+ TO-220
CD4099BE 785 TI 16+ DIP
ENC28J60-I/SO 785 MICROCHIP 13+ SOP
BTA41-800B 795 ST 15+ TO-3P
PIC16F883-I/SO 799 MICROCHIP 16+ SOP
2SD1406-Y 800 TOS 16+ TO-3P
TOP414GN 800 POWER 14+ SOP-8
TDA7253 802 ST 14+ ZIP
L4960 822 ST 14+ ZIP
STPS1045D 822 ST 16+ TO-220
AP919 881 VALENCE 16+ TQFP
ADC0804 887 NS 13+ SOP
AM26LV31CDR 888 TI 15+ SOP-16
EPM2210F324I5N 888 ALTERA 16+ BGA
LTC1628IG 888 LINEAR 16+ SSOP
CD4012BE 899 TI 14+ DIP
G4PC30UD 900 IR 14+ TO-3P
PT2272-M6 900 PTC 14+ DIP
RHRP30120 900 FAIRCHILD 16+ TO-220
MP4211 910 TOSHIBA 16+ NA
AD7740YRMZ 911 AD 13+ MSOP-8
FOD260L 922 FSC 15+ DIP-8
PIC16F916-I/SP 922 MICROCHIP 16+ DIP

 

 

 

 

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