STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET
manufacturer:
Manufacturer
Description:
N-Channel 500 V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage:
500 V
Drain-gate Voltage:
500 V
Gate- Source Voltage:
±25 V
Drain Current (pulsed):
72 A
Peak Diode Recovery Voltage Slope:
15 V/ns
Max. Operating Junction Temperature:
150 °C
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
STP21NM50N-STF21NM50N-STW21NM50N
STB21NM50N - STB21NM50N-1
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET
General Features
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
APPLICATIONS
The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
|---|---|---|---|---|
| TO-220 / D2PAK / I2PAK / TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 500 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 18 | 18 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 11 | 11 (*) | A |
| IDM (•) | Drain Current (pulsed) | 72 | 72 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 140 | 30 | W |
| Derating Factor | 1.12 | 0.23 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| Viso | Insulation Winthstand Voltage (DC) | -- | 2500 | V |
| Tstg | Storage Temperature | –55 to 150 | °C | |
| Tj | Max. Operating Junction Temperature | 150 | °C | |
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Stock Offer (Hot Sell)
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| PS8701-F3-AX | 16094 | RENESAS | 15+ | SOP-5 |
| PSMN4R0-40YS | 10059 | 16+ | SOT669 | |
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| PTH08T210WAZT | 958 | TI | 16+ | DIP-14 |
| PUMD3 | 152000 | 16+ | SOT-363 | |
| PUMH10 | 21000 | 14+ | SOT-363 | |
| PV0402AP | 7660 | I0R | 15+ | SOP-8 |
| PVT312 | 6304 | IOR | 13+ | DIP-6 |
| PVT312L | 5302 | IOR | 14+ | SOP-6 |
| PZT2222A | 81000 | FSC | 13+ | SOT-223 |
| PZT2222AT1G | 54000 | ON | 16+ | SOT-223 |
| PZTA42T1G | 35000 | ON | 16+ | SOT-223 |
| PZTA92T1G | 36000 | ON | 13+ | SOT-223 |
| Q13FC1350000400 | 38000 | EPSON | 13+ | SMD |
| QFET-3000-TR1G | 16165 | AVAGO | 16+ | SOT-343 |
| R1LP0408CSB-7LI | 3865 | RENESAS | 16+ | TSOP-32 |
| R2A15120FA | 5054 | RENESAS | 14+ | QFP48 |
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