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Home > products > Electronic IC Chips > IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

manufacturer:
Manufacturer
Description:
N-Channel 20 V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Pulsed Drain Current :
30 A
Power Dissipation:
1.8 W
Linear Derating Factor:
14 MW/°C
Gate-to-Source Voltage:
±12 V
Peak Diode Recovery Dv/dt ‚:
5.0 V/ns
Junction And Storage Temperature:
-55 To + 150 °C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

IRF7601 HEXFET® Power MOSFET

 

• Generation V Technology

• Ultra Low On-Resistance

• N-Channel MOSFET

• Very Small SOIC Package

• Low Profile (<1.1mm)

• Available in Tape & Reel

• Fast Switching

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

 

 

 

Absolute Maximum Ratings

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.7 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.6 A
IDM Pulsed Drain Current  30 A
PD @TA = 25°C Power Dissipation 1.8 W
  Linear Derating Factor 14 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

 

 

 

 

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
LD1117S25TR 39000 ST 13+ SOT-223
LD1117S33CTR 32000 ST 16+ SOT-223
LD39015M18R 8024 ST 16+ SOT23-5
LD39300PT33-R 6785 ST 14+ TO-252
LD7531AMGL 16615 LD 16+ SOT23-6
LD7830GR 9996 LD 15+ SOP-8
LDB212G4005C-001 56000 MURATA 14+ SMD
LF25CDT 21498 ST 13+ TO-252
LF347MX 7640 NS 00+ SOP-14
LFB212G45SG8A192 40000 MURATA 16+ SMD
LFCN-400+ 1736 MINI 14+ SMD
LFCN-80+ 3554 MINI 15+ SMD
LFCN-900+ 3324 MINI 15+ SMD
LFE2M100E-6FN900C-5I 256 LATTICE 16+ BGA900
LFXP2-8E-5TN144C 1363 LATTICE 16+ QFP144
LH1518AABTR 3172 VISHAY 04+ SMD-6
LH1520AAC 8563 VISHAY 13+ SOP-8
LH1540AABTR 5958 VISHAY 00+ SOP-6
LH5116NA-10 14603 SHARP 13+ SOP-24
LHI878/3902 14674 HEIMANN 10+ CAN-3
LIS2DH12TR 7611 ST 15+ LGA12
LIS3DHTR 4847 ST 14+ LGA16
LL4004 15000 ST 16+ LL41
LL4148-GS08 45000 VISHAY 15+ LL34
LLQ2012-F56NJ 12000 TOKO 16+ SMD
LM1086CSX-3.3 21569 NS 15+ TO-263
LM1086CT-3.3 15605 NS 15+ TO-220
LM111J-8 5202 NSC 15+ CDIP-8
LM19CIZ 4073 NS 16+ TO-92
LM201AN 4387 ON 16+ DIP-8

 

 

 

 

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