SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology
manufacturer:
Manufacturer
Description:
IGBT NPT 1200 V 6.2 A 62 W Through Hole PG-TO220-3-1
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-emitter Voltage:
1200 V
DC Collector Current:
6.2 A
Pulsed Collector Current:
9.6 A
Gate-emitter Voltage:
±20 V
Power Dissipation:
62 W
Operating Junction And Storage Temperature:
-55...+150°C
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
SGP02N120, SGB02N120, SGD02N120
Fast S-IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
6.2 2.8 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 9.6 | A |
| Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C | 9.6 | A | |
| Gate-emitter voltage | VGE | ±20 | V |
| Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C | EAS | 10 | mJ |
| Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C | tSC | 10 | µs |
| Power dissipation TC = 25°C | Ptot | 62 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+150 | °C |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | 260 | °C |
Stock Offer (Hot Sell)
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MOQ:
10pcs