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Home > products > Electronic IC Chips > NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

manufacturer:
Manufacturer
Description:
Mosfet Array 30V 3.7A, 2.9A 900mW Surface Mount 8-SOIC
Category:
Electronic IC Chips
Price:
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Payment Method:
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Specifications
Drain-Source Voltage:
30 Or -30 V
Gate-Source Voltage:
± 20 V
Power Dissipation For Dual Operation:
2 W
Operating And Storage Temperature:
-55 To 150 °C
Thermal Resistance, Junction-to-Ambient:
78 °C/W
Thermal Resistance, Junction-to-Case:
40 °C/W
Highlight:

power mosfet ic

,

multi emitter transistor

Introduction

 

NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

 

General Description

 

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

 

Features

  • N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
  • P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
  • High density cell design or extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.
  • Dual (N & P-Channel) MOSFET in surface mount package.

 

Absolute Maximum Ratings TA= 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units
VDSS Drain-Source Voltage 30 -30 V
VGSS Gate-Source Voltage ± 20 ± 20 V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

± 3.7 ± 2.9 A
± 15 ± 150
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

(Note 1c)

1.6
1
0.9  
TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C

Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

 

Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78℃/W when mounted on a 0.5 in2 pad of 2oz cpper.

b. 125℃/W when mounted on a 0.02 in2 pad of 2oz cpper.

c. 135℃/W when mounted on a 0.003 in2 pad of 2oz cpper.

 

Scale 1 : 1 on letter size paper

 

 

 

 

 

Stock Offer (Hot Sell)

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LXT6234QE BO 4013 INTEL 16+ QFP100
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