STP75NF75 Power Mosfet Transistor npn general purpose transistor
manufacturer:
Manufacturer
Description:
N-Channel 75 V 80A (Tc) 300W (Tc) Through Hole TO-220
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage:
75 V
Drain-gate Voltage:
75 V
Gate-source Voltage:
± 20 V
Peak Diode Recovery Voltage Slope:
12 V/ns
Single Pulse Avalanche Energy:
700 MJ
Operating Junction & Storage Temperature:
-55 To 175 °C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
STB75NF75
STP75NF75 - STP75NF75FP
N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP -
D2PAK STripFET™ II Power MOSFET
General features
| Type | VDSS | RDS(on) | ID |
| STB75NF75 | 75V | <0.011Ω | 80A(1) |
| STP75NF75 | 75V | <0.011Ω | 80A(1) |
| STP75NF75FP | 75V | <0.011Ω | 80A(1) |
1. Current limited by package
■ Exceptional dv/dt capability
■ 100% avalanche tested
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Applications
■ Switching application
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| D2PAK /TO-220 | TO-220FP | |||
| VDS | Drain-source voltage (VGS = 0) | 75 | V | |
| VDGR | Drain-gate voltage (RGS = 20KΩ) | 75 | V | |
| VGS | Gate-source voltage | ± 20 | V | |
| ID (1) | Drain current (continuous) at TC = 25°C | 80 | 80 | A |
| ID (1) | Drain current (continuous) at TC = 100°C | 70 | 70 | A |
| IDM(2) | Drain current (pulsed) | 320 | 320 | A |
| PTOT | Total dissipation at TC = 25°C | 300 | 45 | W |
| Derating factor | 2.0 | 0.3 | W/°C | |
| dv/dt (3) | Peak diode recovery voltage slope | 12 | V/ns | |
| EAS (4) | Single pulse avalanche energy | 700 | mJ | |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) | -- | 2000 | V |
|
TJ Tstg |
Operating junction temperature Storage temperature |
-55 to 175 | °C | |
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
4. Starting TJ = 25°C, ID = 40A, VDD = 37.5V
Internal schematic diagram
Stock Offer (Hot Sell)
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| TDA8020HL/C2 | 2036 | 11+ | QFP32 | |
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| STM8AF6266TCY | 5788 | ST | 14+ | QFP32 |
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| STM8L152K6T6 | 2351 | ST | 16+ | QFP32 |
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| STI5105ALC | 1604 | ST | 16+ | QFP216 |
| SLA913FFOR | 692 | EPSON | 10+ | QFP160 |
| STM32F405ZGT6 | 572 | ST | 16+ | QFP144 |
| S1D13506F00A200 | 743 | EPSON | 13+ | QFP128 |
| TW2866-LC1-CR | 2015 | INTERSIL | 14+ | QFP128 |
| TW2868-LA2-CR | 1586 | INTERSIL | 16+ | QFP128 |
| W83627HG-AW | 4108 | NUVOTON | 13+ | QFP128 |
| RTL8110SC-GR | 2972 | REALTEK | 16+ | QFP128 |
| RTL8204B-VC | 15914 | REALTEK | 08+ | QFP128 |
| RTL8212-GR | 1682 | REALTEK | 14+ | QFP128 |
| SCH5514E-NS | 1829 | SMSC | 10+ | QFP128 |
| STV0900A | 665 | ST | 13+ | QFP128 |
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MOQ:
20pcs