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Home > products > Electronic IC Chips > 2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

manufacturer:
Manufacturer
Description:
Programmable Unijunction Transistor (UJT) 35V 300 mW TO-206AA, TO-18-3 Metal Can
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VDGR:
300 V
VGSS:
±30 V
ID:
32 A
Tch:
150 °C
Highlight:

power mosfet ic

,

silicon power transistors

Introduction
2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

 

 

SILICON UNIJUNCTION TRANSISTORS

Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

 

The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s.

 

ABSOLUTE MAXIMUM RATINGS Tj=125°C unless otherwise noted

Symbol  Ratings 

 2N2646

2N2647 

Unit
VB2E  Emitter-Base2 Voltage  30   V
Ie   RMS Emitter Current   50  mA
ie *  Peak Pulse Emitter Current 2  A
VB2B Interbase Voltage 35   V
PD  RMS power Dissipation 300  mW
TJ  Junction Temperature -65 to +125 °C
TStg  Storage Temperature -65 to +150 °C

 

 

 

STOCK LIST 

 

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