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Home > products > Electronic IC Chips > FDS5690 60V Trench Power Mosfet Transistor , smd linear power mosfet

FDS5690 60V Trench Power Mosfet Transistor , smd linear power mosfet

manufacturer:
Manufacturer
Description:
N-Channel 60 V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Drain-Source Voltage:
60 V
Gate-Source Voltage:
±20 V
Drain Current - Continuous:
7 A
Power Dissipation For Single Operation:
2.5 W
Operating And Storage Junction Temperature Range:
-55 To +150 °C
Highlight:

power mosfet ic

,

silicon power transistors

Introduction

FDS5690 60V N-Channel PowerTrench MOSFET smd power mosfet linear power mosfet


Features

• 7 A, 60 V.

RDS(on) = 0.028 Ω @ VGS = 10 V

RDS(on) = 0.033 Ω @ VGS = 6 V.

• Low gate charge (23nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability

 

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

 

Applications

• DC/DC converter

• Motor drives

 

Typical Characteristics

 

 

 

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IAM-82008 2460 AGILENT 13+ SOP-8
A3951SW 2230 ALLEGRO 16+ ZIP-12
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2N6075AG 3000 ON 16+ TO-126
ADM206AR 2000 AD 15+ SOP
DG307ACJ 8520 SIL 15+ DIP
MMBD5819LT1G 40000 ON 16+ SOD-123
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2SA1930+2SC5171 6402 TOSHIBA 15+ TO-220
2SA1930+2SC5171 3000 TOSHIBA 15+ TO-220
MOCD211 5658 FAIRCHILD 16+ SOP
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