IRFB20N50KPBF Power Mosfet Transistor power mosfet ic
manufacturer:
Manufacturer
Description:
N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Pulsed Drain Current:
80 A
Power Dissipation:
280 W
Linear Derating Factor:
2.2 W/°C
Gate-to-Source Voltage:
± 30 V
Peak Diode Recovery Dv/dt:
6.9 V/ns
Operating Junction And Storage Temperature:
-55 To + 150°C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| MMBT4403LT1G | 24000 | LRC | 16+ | SOT-23 |
| MMBT5401LT1G | 27000 | ON | 16+ | SOT-23 |
| MMBT5550 | 9000 | FSC | 08+ | SOT-23 |
| MMBT5551LT1G | 15000 | LRC | 16+ | SOT-23 |
| MMBT6427 | 9000 | FSC | 08+ | SOT-23 |
| MMBTA06-7-F | 9000 | DIODES | 15+ | SOT-23 |
| MMBTA13LT1G | 9000 | ON | 16+ | SOT-23 |
| MMBTA14 | 6000 | FSC | 05+ | SOT23-3 |
| MMBTA42LT1G | 9000 | LRC | 15+ | SOT-23 |
| MMBZ5230BLT1G | 18000 | LRC | 16+ | SOT-23 |
| MMBZ5234BLT1G | 18000 | ON | 15+ | SOT-23 |
| MMBZ5248BLT1G | 18000 | LRC | 16+ | SOT-23 |
| MMBZ5257BLT1G | 18000 | LRC | 15+ | SOT-23 |
| MMBZ5V6ALT1G | 18000 | ON | 10+ | SOT-23 |
| MMSZ2V4T1G | 12000 | ON | 14+ | SOD-123 |
| MMSZ2V7T1G | 9000 | ON | 16+ | SOD-123 |
| MMSZ4681T1G | 12000 | ON | 15+ | SOD-123 |
| MMSZ4684T1G | 12000 | ON | 15+ | SOD-123 |
| MMSZ4689T1G | 9000 | ON | 16+ | SOD-123 |
| MMSZ5234B-7-F | 12000 | DIODES | 12+ | SOD-123 |
| MMSZ5243BT1G | 21000 | LRC | 15+ | SOD-123 |
| MMSZ5250BT1G | 21000 | ON | 16+ | SOD-123 |
| MMSZ5254BT1G | 9000 | ON | 14+ | SOD-323 |
| MMSZ5255B | 9000 | DIODES | 16+ | SOD-123 |
| MMSZ6V2T1G | 9000 | ON | 13+ | SOD-123 |
| MOC3022S-TA1 | 22000 | LITEON | 15+ | SMD |
| MOC3023M | 14343 | FSC | 16+ | DIP-6 |
| MOC3023SR2M | 7397 | FSC | 16+ | SOP-6 |
| MOC3023S-TA1 | 30000 | LITEON | 14+ | SMD-6 |
| MOC3030 | 6391 | FSC | 14+ | DIP-6 |
IRFB20N50KPbF SMPS MOSFET
HEXFET Power MOSFET
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
- Lead-Free
Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)
Absolute Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 20 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | A |
| IDM | Pulsed Drain Current | 80 | A |
| PD @TC = 25°C | Power Dissipation | 280 | W |
| Linear Derating Factor | 2.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 6.9 | V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds (1.6mm from case ) | 300 | °C | |
| Mounting Torque, 6-32 or M3 screw | 10 | N |
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MOQ:
10pcs