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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

manufacturer:
Manufacturer
Description:
N-Channel 60 V 30A (Tc) 79W (Tc) Through Hole TO-220-3
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
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Specifications
Drain-Source Voltage:
60 V
Gate-Source Voltage:
± 25 V
Single Pulsed Avalanche Energy:
280 MJ
Avalanche Current:
30 A
Repetitive Avalanche Energy:
7.9 MJ
Operating And Storage Temperature:
-55 To +175 °C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

Stock Offer (Hot Sell)

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FQP30N06

60V N-Channel MOSFET

 

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

 

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

 

Features

• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 40 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

 

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP30N06 Units
VDSS Drain-Source Voltage 60 V
ID

Drain Current - Continuous (TC = 25°C)

                    - Continuous (TC = 100°C)

30 A
21.3 A
IDM Drain Current - Pulsed (Note 1) 120 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) 30 A
EAR Repetitive Avalanche Energy (Note 1) 7.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD

Power Dissipation (TC = 25°C)

                       - Derate above 25°C

79 W
0.53 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C

 

 

 

 

 

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