2SK3564 Silicon N Channel MOS Type Switching Regulator Applications switching power mosfet
manufacturer:
Manufacturer
Description:
N-Channel 900 V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VDSS:
900 V
VDGR:
900 V
VGSS:
±30 V
ID:
3 A
IDP:
9 A
Highlight:
power mosfet ic
,silicon power transistors
Introduction
2SK3564
Silicon N Channel MOS Type Switching Regulator Applications switching power mosfet
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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