Q6012LH5 power mosfet ic Triacs Sensitive Gate Power Mosfet Transistor Alternistor Triacs
power mosfet ic
,multi emitter transistor
Alternistor Triacs (6 A to 40 A)
General Description
Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III.
This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.
All alternistors have glass-passivated junctions to ensure loCM GROUPerm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination.
Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms.
Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.
Features
• High surge current capability
• Glass-passivated junctions
• 2500 V ac isolation for L, J, and K Packages
• High commutating dv/dt
• High static dv/dt
Test Conditions
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized
I 2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing
IDRM — Peak off-state current gate open; VDRM = maximum rated value
IGT — DC gate trigger current in specific operating quadrants; VD = 12 V dc
IGTM — Peak gate trigger current
IH — Holding current (DC); gate open
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT≦ IGTM
tgt — Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time
VDRM — Repetitive peak blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc
VTM — Peak on-state voltage at maximum rated RMS current
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
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