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Home > products > Electronic IC Chips > BD682G npn darliCM GROUPon power transistor Power Mosfet Transistor Plastic Medium−Power Silicon PNP DarliCM GROUPons

BD682G npn darliCM GROUPon power transistor Power Mosfet Transistor Plastic Medium−Power Silicon PNP DarliCM GROUPons

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP - DarliCM GROUPon 100 V 4 A 40 W Through Hole TO-126
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Emitte-base Voltage (IC = 0):
5 V
Collector Current:
4 A
Collector Peak Current:
6 A
Base Current:
0.1 A
Storage Temperature:
-65 To 150 °C
Max. Operating Junction Temperature:
150 °C
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silicon power transistors

Introduction

 

Complementary power DarliCM GROUPon transistors

 

Features

■ Good hFE linearity

■ High fT frequency

■ Monolithic DarliCM GROUPon configuration with integrated antiparallel collector-emitter diode

 

Applications

■ Linear and switching industrial equipment

 

Description

The devices are manufactured in planar base island technology with monolithic DarliCM GROUPon configuration.

 

Absolute maximum ratings

Symbol Parameter   Value Unit
NPN BD677 BD677A BD679 BD679A BD681
PNP BD678 BD678A BD680 BD680A BD682
VCBO Collector-base voltage (IE = 0) 60 80 100 V
VCEO Collector-emitter voltage (IB = 0)
VEBO Emitte-base voltage (IC = 0) 5 V
IC Collector current 4 A
ICM Collector peak current 6 A
IB Base current 0.1 A
PTOT Total dissipation at Tcase = 25°C 40 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C

Note: For PNP types voltage and current values are negative

 

Internal schematic diagram

 

 

Resistive load switching test circuit

 

Note: For PNP types voltage e current values are negative.

 

Package mechanical data

 

 

 

Stock Offer (Hot Sell)

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