BC817-25 npn general purpose transistor Power Mosfet Transistor SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)
Specifications
Collector-base Voltage:
50 V
Collector-emitter Voltage:
45 V
Emitter-base Voltage:
5 V
Collector Current-continuous:
0.5 A
Collector Dissipation:
0.3 W
Junction And Storage Temperature:
-55 -150 ℃
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)
FEATURES
- For general AF applications
- High collector current
- High current gain
- Low collector-emitter saturation voltage
MECHANICAL DATA
- Case: Molded plastic
- Epoxy: UL 94V-O rate flame retardant
- Lead: MIL-STD-202E method 208C guaranteed
- Mounting position: Any
- Weight: 0.008 gram
MAXIMUM RATINGS ( @ TA = 25℃ unless otherwise noted )
CHARACTERISTICS | SYMBOL | VALUE | UNITS |
Collector-base voltage | VCBO | 50 | V |
Collector-emitter voltage | VCEO | 45 | V |
Emitter-base voltage | VEBO | 5 | V |
Collector current-continuous | IC | 0.5 | A |
Collector dissipation | PC | 0.3 | W |
Junction and storage temperature | TJ,Tstg | -55 -150 | ℃ |
RATING AND CHARACTERISTICS CURVES ( BC817-16/-25/-40 )
Stock Offer (Hot Sell)
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LZ-24SE | 4816 | TAKAMISAW | 15+ | DIP |
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MC74VHC1G14DFT1 | 38000 | ON | 16+ | SOT |
LM79L05ACMX | 10000 | NSC | 14+ | SOP-8 |
OPA4131PA | 7640 | TI | 12+ | DIP |
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MOQ:
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