MR756 Power Mosfet Transistor High Current Lead Mounted Rectifiers
multi emitter transistor
,silicon power transistors
High Current Lead Mounted Rectifiers
Features
• Current Capacity Comparable to Chassis Mounted Rectifiers
• Very High Surge Capacity
• Insulated Case
• Pb−Free Packages are Available* Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 2.5 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Cathode Polarity Band
MR7 = Device Code
xx = 50, 51, 52, 54, 56 or 60
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
For a square wave input of amplitude Vm, the efficiency factor becomes:
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing AC voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the AC component of Vo with a true rms AC voltmeter and the DC component with a DC voltmeter. The data was used in Equation 1 to obtain points for Figure 9.
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
| Image | Part # | Description | |
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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