BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23
manufacturer:
Manufacturer
Description:
N-Channel 50 V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VDSS:
50 Vdc
VGS:
± 20 Vdc
I D:
200 MA
PD:
225 MW
TL:
260 °C
Highlight:
power mosfet ic
,silicon power transistors
Introduction
Power MOSFET 200 mA, 50 V N−Channel SOT−23
Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Pb−Free Packages are Available
• Low Threshold Voltage (VGS(th):
0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications
• Miniature SOT−23 Surface Mount Package Saves Board Space
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage | VDSS | 50 | Vdc |
| Gate−to−Source Voltage − Continuous | VGS | ± 20 | Vdc |
| Total Power Dissipation @ TA = 25°C | PD | 225 | mW |
| Operating and Storage Temperature Range | TJ, Tstg | − 55 to 150 | °C |
| Thermal Resistance − Junction−to−Ambient | RJA | 556 | °C/W |
| Maximum Lead Temperature for Soldering Purposes, for 10 seconds | TL | 260 | °C |
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MOQ:
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