100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632
manufacturer:
Manufacturer
Description:
N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Drain To Source Voltage:
100 V
Gate To Source Voltage:
±20 V
Continuous (T 80 A C < 111oC, VGS = 10V):
80 A
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W):
12 A
Single Pulse Avalanche Energy (Note 1):
393 MJ
Power Dissipation:
310 W
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 84nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101 Formerly developmental type 82784
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
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