PNP Silicon Transistor General Purpose Switching Application BC856BLT3G
Specifications
Collector-Base Voltage:
-80V
Collector-Emitter Voltage:
-65V
Emitter-Base Voltage:
-5V
Collector Current (DC):
-100 MA
Collector Power Dissipation:
310 MW
Junction Temperature:
150 °C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
Typical Characteristics
Symbol |
Parameter | Value | Units |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current (DC) | -100 | mA |
PC | Collector Power Dissipation | 310 | mW |
TJ | Junction Temperature | 150 | °C |
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