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Home > products > Electronic IC Chips > HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF

HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF

manufacturer:
Manufacturer
Description:
Mosfet Array 12V 9.2A 2W Surface Mount 8-SO
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Drain- Source Voltage:
-12 V
Continuous Drain Current, VGS @ -4.5V:
-7.4 A
Pulsed Drain Current :
-37 A
Power Dissipation :
2.0 W
Linear Derating Factor:
16 MW/°C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

HEXFET Power Mosfet Transistor , power mosfet module IRF7329

 

 

 Trench Technology 

 

Ultra Low On-Resistance

 

 Dual P-Channel MOSFET



Low Profile (<1.8mm) 

 

Available in Tape & Reel 

Lead-Free

 

 

Description

 

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

 

 

  Parameter Max. Units
VDS Drain- Source Voltage  -12 V
ID @ TA = 25°C  Continuous Drain Current, VGS @ -4.5V -9.2 A
ID @ TA= 70°C  Continuous Drain Current, VGS @ -4.5V -7.4 -7.4
IDM  Pulsed Drain Current  -37
PD @TA = 25°C Power Dissipation  2.0 W
PD @TA = 70°C Power Dissipation  1.3
  Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
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MOQ:
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