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Home > products > Electronic IC Chips > Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

manufacturer:
Manufacturer
Description:
P-Channel 20 V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Drain- Source Voltage:
-20 V
Continuous Drain Current, VGS @ -4.5V:
-2.2 A
Pulsed Drain Current :
-22 A
Power Dissipation:
1.3 W
Linear Derating Factor:
0.01 W/°C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF


♦Ultra Low On-Resistance

♦P-Channel MOSFET

♦SOT-23 Footprint

♦Low Profile (<1.1mm)

♦Available in Tape and Reel

♦Fast Switching 

 

 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

 

 

 

 

 

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Stock:
MOQ:
20pcs