Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching
manufacturer:
Manufacturer
Description:
N-Channel 600 V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VDS (V):
600
RDS(on) (Ω):
VGS = 10 V
Qg (Max.) (nC):
60
Qgs (nC):
8.3
Qgd (nC):
30
Configuration:
Single
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
| ORDERING INFORMATION | |
| Package | TO-220 |
| Lead (Pb)-free |
IRFBC40PbF SiHFBC40-E3 |
| SnPb |
IRFBC40 SiHFBC40 |
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Stock:
MOQ:
20pcs