KSP2907ATF General Purpose Transistor
multi emitter transistor
,silicon power transistors
KSP2907A
General Purpose Transistor
• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Refer to KSP2907 for graphs
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -600 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | -60 | V |
| VCEO | Collector-Emitter Voltage | -60 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -600 | mA |
| PC | Collector Power Dissipation | 625 | mW |
| TJ | Junction Temperature | 150 | °C |
| TSTG | Storage Temperature | -55 | °C |
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