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Home > products > Electronic IC Chips > GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

manufacturer:
Manufacturer
Description:
Bridge Rectifier Single Phase Standard 800 V Through Hole GBJ
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Peak Repetitive Reverse Voltage:
800 V
Working Peak Reverse Voltage:
800 V
DC Blocking Voltage:
800 V
RMS Reverse Voltage:
560 V
Typical Junction Capacitance Per Element:
60 PF
Operating And Storage Temperature:
-65 To +150 °C
Highlight:

diode rectifier circuit

,

signal schottky diode

Introduction

 

GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

 

 

Features 

  • Glass Passivated Die Construction 
  • High Case Dielectric StreCM GROUPh of 1500VRMS 
  • Low Reverse Leakage Current 
  • Surge Overload Rating to 240A Peak 
  • Ideal for Printed Circuit Board Applications 
  • Plastic Material - UL Flammability Classification 94V-0 
  • UL Listed Under Recognized Component Index, File Number E94661

 

 

Mechanical Data

  • Case: Molded Plastic 
  • Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 
  • Polarity: Molded on Body 
  • Mounting: Through Hole for #6 Screw 
  • Mounting Torque: 5.0 in-lbs Maximum 
  • Weight: 6.6 grams (approx) 
  • Marking: Type Number

 

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic Symbol Value Unit
Average Forward Rectified Output Current @ TC = 100°C IO 15 A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) IFSM 240 A
Forward Voltage (per element) @ IF = 7.5A DC VFM 1.05 V

Peak Reverse Current @ TC = 25°C

at Rated DC Blocking Voltage @ TC = 125°C

IR

10

500

µA
I2t Rating for Fusing (t < 8.3ms) (Note 1) I 2t 240 A2s
Typical Junction Capacitance per Element (Note 2) Cj 60 pF
Typical Thermal Resistance, Junction to Case (Note 3) RθJC 0.8 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C

 

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink.

 

 

 

 

 

 

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package

 

HIN202CBN 16402 INTERSIL 16+ SOP
HIP0082AB 6910 INTERSIL 16+ HSOP
HIP4082IP 3469 INTERSIL 15+ DIP-16
HIP4082IPZ 7664 NTERSIL 16+ DIP-16
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HJR-3FF-S-Z-5VDC 12765 TIANBO 16+ DIP
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HK1608R47J-T 20000 TAIYO 15+ SMD
HM6264ALFP-10T 3440 HITACHI 16+ SOP-28
HMA121CR3V 15758 FAIRCHILD 09+ SOP-4
HMC241QS16ETR 6244 HITTITE 15+ SSOP-16
HMC311SC70E 1242 HITTITE 14+ SC70-6
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HMC429LP4ETR 1093 HITTITE 15+ HCP-16
HMC476MP86E 2596 HITTITE 15+ SOT-86
HMC539LP3ETR 1984 HITTITE 12+ QFN
HMC618LP3ETR 1199 HITTITE 10+ QFN
HN16012CG 7669 MICM GROUPEK 13+ SOP-16
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HN16614CG 3522 MICM GROUPEK 16+ SOP-16
HR911105A 3493 HANRUN 14+ RJ45
HS01G 21143 ON 14+ SOP-8
HSMG-C170 89000 AVAGO 07+ SMD
HSMH-C170 92000 AVAGO 07+ SMD0805R
HSMM-A100-S00J1 26000 AVAGO 14+ SMD
HSMP-3816-TR1G 5933 AVAGO 15+ SOT23-5
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