IRFZ44NPBF Power MOSFET switching power mosfet low power mosfet
manufacturer:
Manufacturer
Description:
N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Continuous Drain Current, VGS @ 10V:
35 A
Pulsed Drain Current :
160 A
Power Dissipation:
94 W
Linear Derating Factor:
0.63 W/°C
Gate-to-Source Voltage:
± 20 V
Highlight:
diode rectifier circuit
,signal schottky diode
Introduction
STOCK List
| UPC1688G | 3000 | NEC | 16+ | SOT-143 |
| VIPER32 | 3000 | ST | 16+ | DIP-8 |
| VN0300M | 3000 | VISHAY | 16+ | TO-92 |
| VP0808 | 3000 | VISHAY | 14+ | TO-92 |
| ZX5T853G | 3000 | ZETEX | 16+ | SOT223 |
| HEF4024BT | 3001 | PHILPS | 16+ | SO-14 |
| L6565N | 3002 | ST | 15+ | DIP |
| MCP1700T-3002E/TT | 3002 | MICROCHIP | 16+ | SOT-23 |
| MCP1701AT-1802I/CB | 3003 | MICROCHIP | 15+ | SOT23-3 |
| IRAMX20UP60A | 3004 | IR | 12+ | NA |
| 74LVC1G384GW | 3005 | 16+ | SOT-353 | |
| TIP102 | 3008 | ST | 12+ | TO-220 |
| TPS3825-33DBVT | 3008 | TI | 16+ | SOT-153 |
| H20R1202 | 3033 | 16+ | TO-247 | |
| IRF7504TR | 3050 | IR | 16+ | MSOP-8 |
| A7800 | 3100 | AVAGO | 16+ | SOP-8 |
| H21A1 | 3100 | FAIRCHILD | 16+ | DIP-4 |
| IRFB52N15D | 3100 | IR | 14+ | TO-220 |
| RTD2660-GR | 3100 | REALTEK | 16+ | QFP128 |
| SN75C23243DGGR | 3100 | TI | 16+ | TSSOP-48P |
| GT60N321 | 3114 | TOSHIBA | 15+ | TO - 3PL |
| BTS426L1 | 3120 | 16+ | TO-263 | |
| CM1213-08 | 3121 | CMD | 15+ | MSOP10 |
| 2N1893 | 3200 | MOT | 12+ | TO-39 |
| 2SK386 | 3200 | TOSHIBA | 16+ | TO-220F |
| 74HC377PW | 3200 | 12+ | TSSOP | |
| ADM706SARZ | 3200 | AD | 16+ | SOP |
| ADP3338-1.8 | 3200 | AD | 16+ | SOT223 |
| BF513 | 3200 | 16+ | SOT-23 | |
| BS801 | 3200 | HOLTEK | 16+ | SOT23-6 |
| CY7C68013A-128AXI | 3200 | CYPRESS | 16+ | LQFP |
| DS2431P | 3200 | MAXIM | 14+ | TSOC-6 |
| FEP16DTA | 3200 | FSC | 16+ | TO-220 |
| L78M06CDT-TR | 3200 | ST | 16+ | TO-252 |
IRFZ44N
Power MOSFET switching power mosfet low power mosfet
► Advanced Process Technology
► Ultra Low On-Resistance
► Dynamic dv/dt Rating
► 175°C Operating Temperature
► Fast Switching
► Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
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Stock:
MOQ:
100pcs